Enhanced output power of near-ultraviolet InGaN/AlGaN LEDs with patterned distributed bragg reflectors

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 173-179

  Lin, Wen Yu ^a   Wuu, Dong Sing ^a   Huang, Shih Cheng ^a   Horng, Ray Hua ^a,b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaN; distributed Bragg reflector (DBR); GaN; InGaN; light emitting diode (LED); near ultraviolet (UV)

Indexed keywords

ALGAN; DISTRIBUTED BRAGG REFLECTOR (DBR); GAN; INGAN; LIGHT-EMITTING DIODE (LED); ULTRA-VIOLET;

DIODES; DISTRIBUTED BRAGG REFLECTORS; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; REFLECTION;

LIGHT EMITTING DIODES;

EID: 78650864368     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2084579     Document Type: Article

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