Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes

IEEE Photonics Technology Letters

Volumn 20, Issue 23, 2008, Pages 1911-1913

  Kim, Sang Mook ^a   Kim, Jae Bum ^b   Jhin, Junggeun ^b   Baek, Jong Hyeob ^b   Lee, In Hwan ^c   Jung, Gun Young ^b  

^a Korea Photonics Technology Institute (KOPTI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Chonnbuk National University   (South Korea)

Author keywords

AlGaN; flip chip; light emitting diodes (LEDs); patterned sapphire substrate (PSS); silicon optical bench (SiOB); ultraviolet (UV)

Indexed keywords

EID: 85008028646     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/LPT.2008.2004700     Document Type: Article

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