Buried tungsten metal structure fabricated by epitaxial-lateral-overgrown GaN via low-pressure metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 5 B, 2000, Pages

  Haino, Masahiro ^a   Yamaguchi, Motoo ^a   Miyake, Hideto ^a   Motogaito, Atsushi ^a   Hiramatsu, Kazumasa ^a   Kawaguchi, Yasutoshi ^b   Sawaki, Nobuhiko ^b   Iyechika, Yasushi ^c   Maeda, Takayoshi ^c  

^a MIE UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; DECOMPOSITION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TUNGSTEN;

ALUMINUM GALLIUM NITRIDE; EPITAXIAL LATERAL OVERGROWTH (ELO); TUNGSTEN METAL MASK;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033687679     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l449     Document Type: Article

References (10)