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Volumn 97, Issue 25, 2010, Pages

A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement

(3) Rodriguez, J B a Cervera, C a Christol, P a

a UNIVERSITÉ MONTPELLIER II (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL RESISTANCES; ELECTRON HOLE; INAS; MID-INFRARED DETECTION; MID-WAVELENGTH INFRARED PHOTODIODES; PERFORMANCE IMPROVEMENTS; PROOF OF CONCEPT; SIGNAL-TO-NOISE RATIO ENHANCEMENT; STANDARD DESIGN; THICKNESS RATIO; TYPE-II SUPERLATTICES;

GALLIUM ALLOYS; HOLE CONCENTRATION; INDIUM ARSENIDE; PHOTODIODES; SIGNAL TO NOISE RATIO; SUPERLATTICES;

SEMICONDUCTING INDIUM;

EID: 78650753546 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3529940 Document Type: Article

Times cited : (43)

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