Band gap tunability of Type II Antimonide-based superlattices

Physics Procedia

Volumn 3, Issue 2, 2010, Pages 1207-1212

  Razeghi, Manijeh ^a   Nguyen, Binh Minh ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Band structure; GaSb; InAs; M structure; Type II superlattices

Indexed keywords

ANTIMONIDES; AUGER RECOMBINATION; BAND ALIGNMENTS; BAND GAPS; BULK SEMICONDUCTORS; DEVELOPMENT STAGES; DEVICE PERFORMANCE; FABRICATION TECHNIQUE; HGCDTE; INAS; INFRARED PHOTONS; LOW DIMENSIONAL; MATERIAL QUALITY; PHYSICAL NATURE; QUANTUM DOT; QUANTUM SYSTEM; QUANTUM WELL; STATE OF THE ART; STRUCTURE TYPE; THEORETICAL LIMITS; TUNABILITIES; TYPE II; TYPE-II SUPERLATTICES;

ANTIMONY; ENERGY GAP; GALLIUM ALLOYS; INDIUM ANTIMONIDES; MERCURY COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONS; QUANTUM OPTICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; STRUCTURAL DESIGN;

SUPERLATTICES;

EID: 76249120420     PISSN: 18753884     EISSN: 18753892     Source Type: Conference Proceeding    
DOI: 10.1016/j.phpro.2010.01.164     Document Type: Article

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