High-performance focal plane array based on InAs-GaSb superlattices with a 10-μm cutoff wavelength

IEEE Journal of Quantum Electronics

Volumn 44, Issue 5, 2008, Pages 462-467

  Delaunay, Pierre Yves ^a   Nguyen, Binh Minh ^a   Hoffman, Darin ^a   Razeghi, Manijeh ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Focal plane array; Infrared; Photodetectors; Type II superlattice

Indexed keywords

CUT-OFF WAVELENGTHS; DOUBLE HETEROSTRUCTURE; FLIP-CHIP BONDINGS; INAS; INFRARED; INTEGRATION TIME; NOISE EQUIVALENT TEMPERATURE DIFFERENCES; READ OUT INTEGRATED CIRCUITS; SURFACE LEAKAGES; TYPE-II SUPERLATTICE; UNDERFILL;

FLIP CHIP DEVICES; FOCAL PLANE ARRAYS; GALLIUM ALLOYS; INDIUM ARSENIDE; INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING INDIUM; SILICON COMPOUNDS;

FOCUSING;

EID: 49149124035     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.916701     Document Type: Article

References (19)

1. M. Chu, S. Terterian, D. Walsh, H. K. Gurgenian, S. Mesropian, R. J. Rapp, and W. D. Holley, "Recent Progress on LWIR and VLWIR HgCdTe focal plane arrays," Proc. SPIE, vol. 5783, pp. 243-250, 2005.
2. G. Sai-Halasz, R. Tsu, and L. Esaki, "A new semiconductor superlattice," Appl. Phys. Lett., vol. 30, pp. 651-653, 1977.
3. Y. Wei, A. Gin, M. Razeghi, and G. J. Brown, "Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications," Appl. Phys. Lett., vol. 80, pp. 3262-3264, 2002.
4. Y. Wei, A. Gin, M. Razeghi, and G. J. Brown, "Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm," Appl. Phys. Lett., vol. 81, pp. 3675-3678, 2002.
5. Y. Wei and M. Razeghi, "Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering," Phys. Rev. B., vol. 69, p. 085316, 2004.
6. H. Mohseni, V. I. Litvinov, and M. Razeghi, "Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices," Phys. Rev. B., vol. 58, no. 23, p. 15378, 1998.
7. Y. Wei, A. Hood, D. Hoffman, B. M. Nguyen, P. Y. Delaunay, E. Michel, and R. McClintock, "Type II Superlattice Photodetectors for MWIR to VLWIR Focal Plane Arrays," in Proc. SPIE, 2006, p. 62060N-1.
8. M. Walther, J. Schmitz, R. Rehm, S. Kopta, F. Fuchs, J. FleiXner, W. Cabanskib, and J. Zieglerb, "Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors," J. Cryst. Growth, vol. 278, pp. 156-161, 2005.
9. Swaminathan, J. W. Little, and R. L. Tober, "Infrared detectors and lasers operating in the 3-12 μm range using band-gap engineered structures with type II band-gap alignment," in Proc. SPIE, 2006, vol. 6127.
10. Razeghi, Y. Wei, A. Gin, A. Hood, V. Yazdanpanah, M. Z. Tidrow, and V. Nathan, "High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays," Proc. SPIE, vol. 5783, pp. 86-97, 2005.
11. M. Razeghi, P. Y. Delaunay, B. M. Nguyen, A. Hood, D. Hoffman, R. McClintock, Y. Wei, E. Michel, V. Nathan, and M. Z. Tidrow, "First demonstration of 10 microns FPAs in InAs/GaSb superlattices," in Proc. IEEE LEOS, 2006, vol. 20, no. 5, pp. 43-45.
12. P. Y. Delaunay, B. M. Nguyen, D. Hoffman, and M. Razeghi, "320 × 256 infrared focal plane array based on type-II InAs/GaSb superlattice with a 12-μm cutoff wavelength," in Proc. SPIE, 2007, vol. 6542, p. 654204.
13. B. M. Nguyen, D. Hoffman, P. Y. Delaunay, and M. Razeghi, "Polarity inversion of type II InAs/GaSb superlattice photodiodes," Appl. Phys. Lett., vol. 91, p. 103503, 2007.
14. P. Y. Delaunay, A. Hood, B. M. Nguyen, D. Hoffman, Y. Wei, and M. Razeghi, "Passivation of type-II InAs/GaSb double heterostructure," Appl. Phys. Lett., vol. 91, p. 091112, 2007.
15. B. M. Nguyen, D. Hoffman, Y. Wei, P. Y. Delaunay, A. Hood, and M. Razeghi, "Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm," Appl. Phys. Lett. vol. 90, p. 231108, 2007.
16. A. Chandola, R. Pino, and P. S. Dutta, "Below bandgap optical absorption in tellurium-doped GaSb," Semicond. Sci. Technol., vol. 20, pp. 886-893, 2005.
17. A. Hood, P. Y. Delaunay, D. Hoffman, B. M. Nguyen, Y. Wei, M. Razeghi, and V. Nathan, "Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation," Appl. Phys. Lett, vol. 90, p. 233513, 2007.
18. D. R. Rhiger, R. E. Kvaas, S. F. Harris, R. E. Bornfreund, Y. N. Thai, C. J. Hill, J. V. Li, S. D. Gunapala, and J. M. Mumolob, "Progress with type-II superlattice IR detector arrays," Proc. SPIE, vol. 6542, p. 654202, 2007.
19. A. Rogalski, "Quantum well photoconductors in infrared detector technology," J. Appl. Phys., vol. 93, pp. 4355-4391, 2003.