Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Gopal, V ^a   Plis, E ^b   Rodriguez, J B ^b   Jones, C E ^c   Faraone, L ^a   Krishna, S ^b  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b MSC01 1070   (United States)

^c Santa Barbara Focalplane   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION CURRENTS; DYNAMIC RESISTANCES; EFFECTIVE BAND GAPS; ELECTRICAL CHARACTERISTICS; ELECTRICAL PERFORMANCES; EXPERIMENTAL DATUMS; HIGHER TEMPERATURES; INAS/GASB; LOW TEMPERATURES; MID INFRARED; N POLARITIES; OHMIC SHUNTS; RESISTANCE AREAS; STRAIN LAYERS; TEMPERATURE DEPENDENCES;

DIODES;

EID: 58149265394     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3042232     Document Type: Article

References (28)

1. Y. Wei, A. Hood, H. Yau, A. Gin, M. Razeghi, M. Z. Tidrow, and V. Nathan, Appl. Phys. Lett. 86, 233106 (2005).
2. R. Rehm, M. Walther, J. Schmitz, J. Fleißner, F. Fuchs, J. Ziegler, and W. Cabanski, Opto-Electron. Rev. 14, 19 (2006).
3. J. P. Prineas, M. Maiorov, C. Cao, J. T. Olesberg, M. E. Flatte, M. Reddy, C. Coretsopoulos, and M. Itzler, Proc. SPIE 6119, 36 (2006).
4. J. L. Johnson, Proc. SPIE 3948, 118 (2000).
5. M. Razeghi, H. Mohseni, and V. I. Litvinov, Phys. Rev. B 58, 15378 (1998).
6. E. R. Youngdale, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, C. H. Grein, P. M. Young, and H. Ehrenreich, Appl. Phys. Lett. 64, 3160 (1994).
7. N. Y. Aziz, R. F. Cannata, G. T. Kincaid, R. J. Hansen, J. L. Heath, W. J. Parrish, S. M. Petronio, and J. T. Woolaway, Proc. SPIE 3698, 766 (1999).
8. E. Plis, J. B. Rodriguez, H. Kim, G. Bishop, Y. D. Sharma, L. R. Dawson, S. Krishna, S. J. Lee, C. E. Jones, and V. Gopal, Appl. Phys. Lett. 91, 133512 (2007).
9. E. Plis, S. J. Lee, Zh. Zhu, A. Amtout, and S. Krishna, IEEE J. Sel. Top. Quantum Electron. 12, 1269 (2006).
10. Q. K. Yang, F. Fuchs, J. Schmitz, and W. Pletschen, Appl. Phys. Lett. 81, 4757 (2002).
11. H. Mohseni, A. Tahraoui, J. S. Wojkowski, and M. Razeghi, Proc. SPIE 3948, 145 (2000).
12. H. Mohseni, J. S. Wojkowski, A. Tahraoui, and M. Razeghi, Proc. SPIE 3948, 153 (2000).
13. H. Mohseni, Y. Wei, and M. Razeghi, Proc. SPIE 4288, 191 (2001).
14. J. L. Johnson, L. A. Samoska, and A. C. Gossard, J. Appl. Phys. 80, 1116 (1996).
15. M. B. Reine, A. K. Sood, and T. J. Tredwell, Photovoltaic Infrared Detectors, edited by, R. K. Willardson, and, A. C. Beer, (Academic, New York, 1981), p. 201.
16. C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957).
17. R. Schoolar, S. Price, and J. Rosebeck, J. Vac. Sci. Technol. B 10, 1507 (1992).
18. R. L. Anderson, Solid-State Electron. 5, 341 (1962).
19. J. Y. Wong, IEEE Trans. Electron Devices ED-27, 48 (1980).
20. M. A. Kinch, J. Vac. Sci. Technol. 21, 215 (1982).
21. V. Gopal, Semicond. Sci. Technol. 9, 2267 (1994).
22. M. Baker and C. D. Maxey, J. Electron. Mater. 30, 682 (2001).
23. V. Gopal and S. Gupta, IEEE Trans. Electron Devices ED-50, 1220 (2003).
24. V. Gopal and S. Gupta, IEEE Trans. Electron Devices ED-51, 1078 (2004).
25. S. K. Singh, V. Gopal, R. K. Bhan, and V. Kumar, Semicond. Sci. Technol. 15, 752 (2000).
26. V. Gopal, S. K. Singh, and R. M. Mehra, Infrared Phys. Technol. 43, 317 (2002).
27. V. Gopal, S. Gupta, R. K. Bhan, R. Pal, P. K. Chaudhary, and V. Kumar, Infrared Phys. Technol. 44, 143 (2003).
28. A. G. Chynowelth and G. L. Pearson, J. Appl. Phys. 29, 1103 (1958).