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Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

Characterization of midwave infrared InAs/GaSb superlattice photodiode

(5) Cervera, C a Rodriguez, J B a Chaghi, R a At Kaci, H a Christol, P a

a UNIVERSITÉ MONTPELLIER II (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BACKGROUND CONCENTRATION; CAPACITANCE VOLTAGE MEASUREMENTS; CUTOFF WAVELENGTHS; GENERATION-RECOMBINATION PROCESS; HIGH QUALITY; INAS/GASB SUPERLATTICES; MESA-DIODES; MIDWAVE INFRARED; OPTICAL CHARACTERIZATION; PIN PHOTODIODE; QUANTITATIVE ANALYSIS; RESPONSIVITY;

CHARACTERIZATION; ELECTRIC POTENTIAL; PHOTODIODES; SUPERLATTICES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 68249159732 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3174439 Document Type: Article

Times cited : (47)

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