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Journal of Applied Physics

Volumn 106, Issue 3, 2009, Pages

Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

(8) Cervera, C a Rodriguez, J B a Perez, J P a At Kaci, H a Chaghi, R a Konczewicz, L b Contreras, S b Christol, P a

a UNIVERSITÉ MONTPELLIER II (France)

b UNIVERSITÉ MONTPELLIER 2 (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CONDUCTIVE SUBSTRATES; ELECTRICAL PROPERTY; ETCH-STOP LAYERS; HALL MEASUREMENTS; INAS/GASB SUPERLATTICES; SEMI-INSULATING GAAS; SUPER-LATTICE STRUCTURES; TECHNOLOGICAL PROCESS; TYPE II;

BIOACTIVITY; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL GROWTH; ELECTRIC POTENTIAL; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHOTODIODES; SUBSTRATES; SUPERLATTICES;

GALLIUM ALLOYS;

EID: 69149105675 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3191175 Document Type: Article

Times cited : (60)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.