PE-TEOS wafer bonding enhancement at low temperature with a high-κ dielectric capping layer of Al2 O3

Journal of the Electrochemical Society

Volumn 158, Issue 2, 2011, Pages

  Chong, G Y ^a   Tan, C S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH; BONDING INTERFACES; CAPPING LAYER; DIELECTRIC CAPPING LAYERS; LOW TEMPERATURES; MICROVOID; SURFACE ACTIVATION; TETRA-ETHYL-ORTHO-SILICATE; THIN LAYERS;

ALUMINUM; ATOMIC LAYER DEPOSITION; BOND STRENGTH (MATERIALS);

WAFER BONDING;

EID: 78650752011     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3507291     Document Type: Article

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