Silicon wafer bonding using deposited and thermal oxide: A comparative study

Proceedings - Electrochemical Society

Volumn PV 2005-02, Issue , 2005, Pages 400-405

  Radu, I ^a   Singh, R ^a   Reiche, M ^a   Gosele U ^a   Kuck, B ^b   Grabolla, T ^b   Tillack, B ^b   Christiansen, S ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; CHEMICAL VAPOR DEPOSITION; OXIDES; PLASMA DENSITY;

HIGH DENSITY PLASMA; TEOS; WAFER BONDING;

SILICON WAFERS;

EID: 27844458321     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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