Effect of film thickness on the breakdown temperature of atomic layer deposited ultrathin HfO2 and Al2O3 diffusion barriers in copper metallization

Journal of Crystal Growth

Volumn 309, Issue 1, 2007, Pages 12-17

  Majumder, Prodyut ^a   Katamreddy, Rajesh ^a   Takoudis, Christos ^a,b  

^a University of Illinois at Chicago   (United States)

^b University of Illinois at Chicago   (United States)

Author keywords

A1. Diffusion; A1. Nanostructures; A1. X ray diffraction

Indexed keywords

ATOMIC LAYER DEPOSITION; COPPER; DIFFUSION; FILM THICKNESS; METALLIZING; NANOSTRUCTURES; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURES; COPPER METALLIZATION; TRIS-DIETHYLAMINO ALUMINUM;

HAFNIUM COMPOUNDS;

EID: 35548976201     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.09.013     Document Type: Article

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