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Volumn 12, Issue 11, 2009, Pages

Low temperature PE-TEOS oxide bonding assisted by a thin layer of high- κ dielectric

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH; BONDING INTERFACES; CAPPING LAYER; LOW TEMPERATURES; SURFACE ACTIVATION; TETRA-ETHYL-ORTHO-SILICATE; THIN LAYERS; TIO;

EID: 70249095540     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3207872     Document Type: Article
Times cited : (18)

References (10)
  • 3
    • 34748834812 scopus 로고    scopus 로고
    • in IEEE International Interconnect Technology Conference, The Institute of Electrical and Electronics Engineers (IEEE)
    • S. Pozder, R. Chatterjee, A. Jain, Z. Huang, R. E. Jones, and E. Acosta, in IEEE International Interconnect Technology Conference, The Institute of Electrical and Electronics Engineers (IEEE), pp. 213-215 (2007).
    • (2007) , pp. 213-215
    • Pozder, S.1    Chatterjee, R.2    Jain, A.3    Huang, Z.4    Jones, R.E.5    Acosta, E.6
  • 4
  • 8
    • 70249130973 scopus 로고    scopus 로고
    • S. S. Iyer and A. J. Aubertion-Herve, Editors, Inspec, United Kingdom
    • Q. -Y. Tong, in Silicon Wafer Bonding Technology, S. S. Iyer, and, A. J. Aubertion-Herve, Editors, p. 13, Inspec, United Kingdom (2002).
    • (2002) Silicon Wafer Bonding Technology , pp. 13
    • Tong, Q.-Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.