Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection

Applied Physics Letters

Volumn 93, Issue 23, 2008, Pages

  Chang, Man ^a   Jo, Minseok ^a   Kim, Seonghyun ^a   Ju, Yongkyu ^a   Jung, Seungjae ^a   Lee, Joonmyoung ^a   Yoon, Jaesik ^a   Hwang, Hyunsang ^a   Lee, Choongman ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HETEROJUNCTIONS; NITRIDES; OZONE WATER TREATMENT; SILICON;

CHARGE LOSSES; CONDUCTION BAND OFFSETS; CRITICAL LEVELS; DEVICE MODELING; FLASH MEMORY CELLS; TUNNELING DISTANCES; TUNNELING RATES;

FLASH MEMORY;

EID: 57649129003     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3041642     Document Type: Article

References (13)

1. Y. Yang and M. H. White, Solid-State Electron. 44, 949 (2000).
2. T. H. Kim, J. S. Sim, J. D. Lee, H. C. Shim, and B.-G. Park, Appl. Phys. Lett. 85, 660 (2004).
3. S.-H. Gu, D.-W. Hsu, T. Wang, W.-P. Lu, Y.-H. J. Ku, and C.-Y. Lu, IEEE Trans. Electron Devices 54, 90 (2007).
4. A. Paul, Ch. Sridhar, S. Gedam, and S. Mahapatra, Tech. Dig.-Int. Electron Devices Meet. 2006, 1.
5. A. Arreghini, N. Akil, F. Driussi, D. Esseni, L. Selmi, and M. J. van Duuren, Solid-State Electron. 52, 1460 (2008).
6. A. Furńmont, A. Cacciato, L. Breuil, M. Rosmeulen, H. Maes, K. D. Meyer, and J. V. Houdt, Solid-State Electron. 52, 577 (2008).
7. S. S. Chung, P.-Y. Chiang, G. Chou, C.-T. Huang, P. Chen, C.-H. Chu, and C. C.-H. Hsu, Tech. Dig.-Int. Electron Devices Meet. 2003, 617.
8. S.-D. Tzeng and S. Gwo, J. Appl. Phys. 100, 023711 (2006).
9. M. Chang, Y. Ju, J. Lee, S. Jung, H. Choi, M. Jo, S. Jeon, and H. Hwang, Appl. Phys. Lett. 93, 022101 (2008).
10. H.-T. Lue, S.-Y. Wang, Y.-H. Hsiao, E.-K. Lai, L.-W. Yang, T. Yang, K.-C. Chen, K.-Y. Hsieh, R. Liu, and C. Y. Lu, Tech. Dig.-Int. Electron Devices Meet. 2006, 1.
11. M. Specht, M. Städele, S. Jakschik, and U. Schröder, Appl. Phys. Lett. 84, 3076 (2004).
12. G. Wang and M. H. White, Solid-State Electron. 44, 949 (2008).
13. S. Jeon and C. Kim, Electrochem. Solid-State Lett. 9, G265 (2006).