Chemical effect on the material removal rate in the CMP of silicon wafers

Wear

Volumn 270, Issue 3-4, 2011, Pages 312-316

  Wang, Y G ^a   Zhang, L C ^a   Biddut, A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Alumina; Ceria; Chemo mechanical polishing; CMP; PH; Removal rate

Indexed keywords

ALKALINE SLURRY; ALUMINA PARTICLES; CERIA; CERIA PARTICLES; CHEMICAL EFFECT; CHEMO-MECHANICAL POLISHING; CMP; MATERIAL REMOVAL RATE; MOLECULAR SCALE; OXIDIZER CONCENTRATION; PARTICLE AGGLOMERATIONS; PH VALUE; REMOVAL MECHANISM; REMOVAL RATE; SLURRY FLOW RATES; TWO PARTICLES; WAFER SURFACE;

AGGLOMERATION; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; CONTACT ANGLE; HYDROGEN PEROXIDE; PH EFFECTS; PIPE FLOW; POLISHING; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 78650679797     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.wear.2010.11.006     Document Type: Article

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