Electrochemical behavior and polishing properties of silicon wafer in alkaline slurry with abrasive CeO2

Transactions of Nonferrous Metals Society of China (English Edition)

Volumn 18, Issue 1, 2008, Pages 178-182

  SONG, Xiao lan ^a   XU, Da yu ^a   ZHANG, Xiao wei ^a   SHI, Xun da ^b   JIANG, Nan ^a   QIU, Guan zhou ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

abrasive CeO2; Chemical mechanical polishing(CMP); electrochemical characteristics; material removal rate(MRR); slurry

Indexed keywords

ABRASIVES; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; ELECTROCHEMICAL PROPERTIES; NANOSTRUCTURED MATERIALS; PH EFFECTS; SLURRIES;

MATERIAL REMOVAL RATE (MRR); POLARIZATION CURVE;

SILICON WAFERS;

EID: 39749188771     PISSN: 10036326     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1003-6326(08)60032-1     Document Type: Article

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