Effect of pH on ceria-silica interactions during chemical mechanical polishing

Journal of Materials Research

Volumn 20, Issue 5, 2005, Pages 1139-1145

  Abiade, Jeremiah T ^a   Choi, Wonseop ^a   Singh, Rajiv K ^a,b  

^a Particle Engineering Research Center   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; FORCE MEASUREMENT; LIGHT SCATTERING; MORPHOLOGY; PARTICLE SIZE ANALYSIS; PH EFFECTS; REMOVAL; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

CERIA SLURRY; CERIA-SILICA INTERACTIONS; IN SITU FRICTION FORCE MEASUREMENTS; SILICA REMOVAL;

SILICA;

EID: 29044450703     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0176     Document Type: Article

References (18)

1. J.M. Steigerwald, S.P. Murarka, and R.J. Gutmann: in Chemical Mechanical Planarization of Microelectronic Materials (Wiley & Sons, New York, 1997).
2. 4 films in an aqueous medium on chemical mechanical planarization for shallow trench isolation. J. Mater. Res. 18, 2163 (2003).
3. C. Kourouklis, T. Kohlmeier, and H.H. Gatzen: The application of chemical-mechanical polishing for planarizing a SU-8/permalloy combination used in MEMS devices. Sens. Actuators A Phys. 106, 263 (2003).
4. R.K. Singh, S.-M. Lee, K.-S. Choi, G.B. Basim, W. Choi, Z. Chen, and B.M. Moudgil: Fundamentals of slurry design for CMP of metal and dielectric materials. Mater. Res. Bull. 27, 752 (2002).
5. L.M. Cook: Chemical processes in glass polishing. J. Non-Cryst. Solids 120, 152 (1990).
6. W. Stumm: In Chemistry of the Solid-Water Interface: Processes at the Mineral-Water and Particle-Water Interface in Natural Systems (Wiley & Sons, New York, 1992)
7. K. Osseo-Asare: Surface Chemical Processes in Chemical Me- chanical Polishing. J. Electrochem. Soc. 149, G651 (2002).
8. 2 particles. J. Non-Cryst. Solids 283, 129 (2001).
9. U. Mahajan, M. Bielmann, and R.K. Singh: In-situ lateral force technique for dynamic surface roughness measurements during chemical mechanical polishing. Electrochem. Solid-State Lett. 2(1), 46 (1999).
10. M. Nabavi, O. Spalla, and B. Cabane: Surface chemistry of nano- metric ceria particles in aqueous dispersions. J. Colloid Interface Sci. 160, 459 (1993).
11. P. Suphantharida and K. Osseo-Asare: Cerium oxide slurries in CMP. electrophoretic mobility and adsorption investigations of ceria/silicate interaction. J. Electrochem. Soc. 151, G658 (2004).
12. W. Choi, S-M. Lee, J.T. Abiade, and R.K. Singh: Effect of slurry ionic salts at dielectric silica CMP. J. Electrochem. Soc. 151(3), G185 (2004).
13. W. Choi, S-M. Lee, and R.K. Singh: Effects of particle concentration in CMP, in Chemical Mechanical Polishing 2001 - Advances and Future Challenges, edited by S.V. Babu, Kenneth C. Cadien, J.G. Ryan, and H.Yano (Mater. Res. Soc. Symp. Proc. 671, Warrendale, PA, 2001), M5.1.
14. U. Mahajan, M. Bielmann, and R.K. Singh: Dynamic lateral force measurements during chemical mechanical polishing of silica. Electrochem. Solid-State Lett. 2(2), 80 (1999).
15. Z. Chen and R.K. Singh: Mechanism of particle deposition on silicon surface during dilute HF cleans. J. Electrochem. Soc. 150, G667 (2003).
16. B.V. Derjaguin, N.V. Churaev, and V.M. Muller: Surface Forces (Consultant Bureau, New York, 1987).
17. G.B. Basim and B.M. Moudgil: Role of interaction forces in controlling the stability and polishing performance of CMP slurries. J. Colloid Interface Sci. 256, 137 (2002).
18. N. Chandasekaran: Material removal mechanisms of oxide and nitride CMP with ceria and silica-based slurries - Analysis of slurry particles pre- and post-dielectric CMP, in Advances in Chemical-Mechanical Polishing, edited by D.S. Boning, J.W. Bartha, A. Philipossian, G. Shinn, and I. Vos (Mater. Res. Soc. Symp. Proc. 816, Warrendale, PA, 2004), K9.2, p. 257.