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Volumn 255, Issue 6, 2009, Pages 3764-3768
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The effect of hydrogen peroxide on polishing removal rate in CMP with various abrasives
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Author keywords
Abrasives; Additives; Chemical mechanical planarization; Selectivity; Shallow trench isolation
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Indexed keywords
ADDITIVES;
ALUMINA;
ALUMINUM OXIDE;
CATALYST SELECTIVITY;
CERIUM OXIDE;
CHEMICAL MECHANICAL POLISHING;
HYDROGEN PEROXIDE;
NITRIDES;
OXIDATION;
PEROXIDES;
POLISHING;
SILICA;
SILICON CARBIDE;
SILICON NITRIDE;
TITANIUM DIOXIDE;
ZIRCONIA;
ABRASIVE PARTICLES;
EFFECT OF HYDROGEN;
NITRIDE SURFACE;
REMOVAL RATE;
SHALLOW TRENCH ISOLATION;
TITANIA;
ABRASIVES;
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EID: 57849091385
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.10.040 Document Type: Article |
Times cited : (54)
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References (29)
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