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Volumn 255, Issue 6, 2009, Pages 3764-3768

The effect of hydrogen peroxide on polishing removal rate in CMP with various abrasives

Author keywords

Abrasives; Additives; Chemical mechanical planarization; Selectivity; Shallow trench isolation

Indexed keywords

ADDITIVES; ALUMINA; ALUMINUM OXIDE; CATALYST SELECTIVITY; CERIUM OXIDE; CHEMICAL MECHANICAL POLISHING; HYDROGEN PEROXIDE; NITRIDES; OXIDATION; PEROXIDES; POLISHING; SILICA; SILICON CARBIDE; SILICON NITRIDE; TITANIUM DIOXIDE; ZIRCONIA;

EID: 57849091385     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.10.040     Document Type: Article
Times cited : (54)

References (29)
  • 13
    • 57849126062 scopus 로고    scopus 로고
    • R. Srinivasan, S.V. Babu, W.G. America, Y.-S. Her, US Patent 6,468,910 (2002).
    • R. Srinivasan, S.V. Babu, W.G. America, Y.-S. Her, US Patent 6,468,910 (2002).
  • 22
    • 57849097298 scopus 로고    scopus 로고
    • W.R. Morrison, K.P. Hunt, European Patent 0853335 (1998).
    • W.R. Morrison, K.P. Hunt, European Patent 0853335 (1998).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.