Effect of alkaline agent in colloidal silica slurry for polycrystalline silicon chemical mechanical polishing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 8 A, 2007, Pages 5089-5094

  Lee, Myung Yoon ^a   Kang, Hyun Goo ^a   Kanemoto, Manabu ^a   Paik, Ungyu ^a   Park, Jea Gun ^a  

^a Hanyang University   (South Korea)

Author keywords

Alkaline agent; CMP; Colloidal silica; Contact angle; Oxide; Polysilicon; Removal rate; Roughness; Selectivity; Slurry; Surface tension

Indexed keywords

CATALYST SELECTIVITY; CONTACT ANGLE; POLYSILICON; SILICA; SLURRIES; SURFACE ROUGHNESS; SURFACE TENSION;

ALKALINE AGENTS; COLLOIDAL SILICA; REMOVAL RATE;

CHEMICAL MECHANICAL POLISHING;

EID: 34547886512     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5089     Document Type: Article

References (17)

1. P. Pavan, R. Bez, P. Olivo, and E. Zanoni: Proc. IEEE 85 (1997) 1248.
2. M. G. Clark: IEE Proc - Circuits Devices Syst. 141 (1994) 3.
3. J. Pearce and A. Lau: Proc. Solar 2002 Int. Solar Energy Conf., 2002, p. 181.
4. J. H. Park, S. H. Hur, J. H. Lee, J. T. Park, J. S. Sel, J. W. Kim, S. B. Song, J. Y. Lee, J. H. Lee, S. J. Son, Y. S. Kim, M. C. Park, S. J. Chai, J. D. Choi, U. I. Chung, J. T. Moon, K. T. Kim, K. N. Kim, and B. I. Ryu: IEDM Tech. Dig., 2004, p. 873.
5. S. H. Li and R. O. Miller: Chemical Mechanical Polishing in Silicon Processing (Academic Press, San Diego, 2000) Semiconductors and Semimetals, Vol. 63, Chap. 5, p. 142.
6. J. M. Steigerward, S. P. Murarka, and R. J. Gutmann: Chemical Mechanical Planarization of Microelectronic Materials (Wiley-Interscience, New York, 1997) Chap. 5, p. 141.
7. A. A. Yasseen, N. J. Mourlas, and M. Mehregany: J. Electrochem. Soc. 144 (1997) 237.
8. G. T. A. Kovacs, N. I. Maluf, and K. E. Petersen: Proc. IEEE 86 (1998) 1536.
9. W. L. Yang, C. Y. Cheng, M. S. Tsai, D. G. Liu, and M. S. Shieh: IEEE Electron Device Lett. 21 (2000) 218.
10. G. J. Pietsch, Y. J. Chabal, and G. S. Higashi: Surf. Sci. 331 (1995) 395.
11. L. M. Cook: J. Non-Cryst. Solids 120 (1990) 152.
12. O. Tabata, R. Asahi, H. Funabashi, K. Shimaoka, and S. Sugiyama: Proc. 6th Int. Conf. Solid-State Sensors and Actuators, 1992, Vol. 34, p. 51.
13. K. B. Sundaram, A. Vijayakumar, and G. Subramanian: Micro-electron. Eng. 77 (2005) 230.
14. P. M. M. C. Bressers, S. A. S. P. Pagano, and J. J. Kelly: J. Electroanal. Chem. 391 (1995) 159.
15. G. J. Pietsch, Y. J. Chabal, and G. S. Higashi: J. Appl. Phys. 78 (1995) 1650.
16. J. C Berg: Wettability (Marcel Dekker, New York, 1993) Surfactant Science Series, Vol. 49, Chap. 1, p. 4.
17. M. S. Silberberg: in Chemistry: The Molecular Nature of Matter and Change, ed. J. M. Smith (McGraw-Hill, New York, 2000) 2nd ed., Chap. 16, p. 686.