Stoichiometric defects in silicon carbide

Journal of Physical Chemistry C

Volumn 114, Issue 51, 2010, Pages 22691-22696

  Liao, Ting ^a,b,c,d   Bedoya Martínez, Olga Natalia ^a   Roma, Guido ^a  

^a SERVICE DE RECHERCHES DE MÉTALLURGIE PHYSIQUE   (France)

^b INSTITUTE OF METAL RESEARCH   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^d UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; ANNEALING PROPERTIES; BOND DEFECTS; CARBON NANOSTRUCTURES; CORE STRUCTURE; CRYSTALLINE AND AMORPHOUS SILICON; LOCAL VIBRATIONAL MODE; METASTABLE STRUCTURES; PARTIAL DISLOCATIONS; SEVEN-MEMBERED RINGS; SIC POLYTYPES; STONE-WALES DEFECTS; TETRAHEDRAL SEMICONDUCTORS; VERY LOW TEMPERATURES;

AMORPHOUS CARBON; AMORPHOUS SILICON; CARBON NANOTUBES; DENSITY FUNCTIONAL THEORY; METASTABLE PHASES; SILICON CARBIDE; STOICHIOMETRY;

DEFECT STRUCTURES;

EID: 78650623640     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp107372w     Document Type: Article

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