Topological defects and the Staebler-Wronski effect in hydrogenated amorphous silicon

Applied Physics Letters

Volumn 87, Issue 19, 2005, Pages 1-3

  Du, Mao Hua ^a   Zhang, S B ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; HYDROGENATED AMORPHOUS SILICON; STAEBLER-WRONSKI EFFECT; TOPOLOGICAL EFFECTS;

CHEMICAL BONDS; COMPLEXATION; HYDROGENATION; MATHEMATICAL MODELS; TOPOLOGY;

AMORPHOUS SILICON;

EID: 27644444105     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2130381     Document Type: Article

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