Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 72-80

  Marqués, Luis A ^a   Pelaz, Lourdes ^a   López, Pedro ^a   Aboy, María ^a   Santos, Iván ^a   Barbolla, Juan ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Amorphization; Atomistic simulation; Ion implantation; Recrystallization; Silicon

Indexed keywords

AMORPHIZATION; ATOMS; ION IMPLANTATION; MOLECULAR DYNAMICS; MONTE CARLO METHODS; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTOR MATERIALS; SILICON;

AMORPHOUS PHASE; ATOMISTIC SIMULATION; BUILDING BLOCKS; SIMULATION TOOLS;

COMPUTER SIMULATION;

EID: 27844490982     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.106     Document Type: Conference Paper

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