Effects of buffer layer on hetero-epi-growth of SiCGe on 6H-SiC

Journal of Rare Earths

Volumn 24, Issue SUPPL., 2006, Pages 19-22

  Tan, Changxing ^a   Chen, Zhiming ^a   Pu, Hongbin ^a   Lu, Gang ^a   Li, Lianbi ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Buffer layer; Heterojunction; Low pressure chemical vapor deposition; SiCGe; Silicon carbide

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; NITROGEN; OPTIMIZATION; SILICON; SILICON CARBIDE;

3C-SIC BUFFER LAYER; 6H-SIC SUBSTRATE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SICGE TERNARY ALLOY;

TERNARY SYSTEMS;

EID: 33745662609     PISSN: 10020721     EISSN: None     Source Type: Journal    
DOI: 10.1179/174602206X90913     Document Type: Article

References (3)

1. Chen Zhiming, Pu Hongbin, Fred R Beyette Jr. A light-activated SiC Darlington transistor using SiCGe as base layer[J]. Chinese Physics Letters, 2003, 20(3): 430.
2. Chen Zhiming, Pu Hongbin, Wo Liming, et al. Hetero-epitaxial growth of SiCGe on SiC[J]. Journal of Microelectronic Engineering, 2006, 83(1): 170.
3. Wu Jieju, Han Xiuxun, Li Jiemin, et al. Influence of buffer layer thickness on the properties of an undoped GaN layer grown on sapphire substrate by metallorganic chemical vapor deposition[J]. Journal of Synthetic Crystal, 2005, 34(3): 466.