Stress and misoriented area formation under large silicon carbide boule growth

Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1015-1018

  Bakin, A S ^a,c   Dorozhkin, S I ^a   Lebedev, A O ^b   Kirillov, B A ^a   Ivanov, A A ^a   Tairov, Yu M ^a  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; SILICON CARBIDE; STRESSES; SUBLIMATION;

DEFECT FORMATION; LELY METHOD; MISORIENTED AREAS; SILICON CARBIDE BOULE GROWTH;

CRYSTALS;

EID: 0033514584     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01200-7     Document Type: Article

References (8)

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3. Yu.M. Tairov, J. Crystal Growth 52 (1981) 146.
4. Yu.M. Tairov, V.F. Tsvetkov, in: Progress in Crystal Growth and Characterization, vol. 7, Pergamon Press, London, 1983, pp. 111-162.
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7. A.S. Bakin, S.I. Dorozhkin, Yu.M. Tairov, Yu. Dyomin, Trans. 3rd Int. High Temperature Electronics Conf. (HiTEC'96), Albuquerque, USA, 1996, pp. II-21-II-24.
8. B.A. Kirillov, A.S. Bakin, Yu.M. Tairov, S.N. Solnyshkin, Simulation of heat and mass transfer during growth of silicon carbide single crystals, Semiconductors 31 (10) (1997) 672.