Optimization of sublimation growth of SiC bulk crystals using modeling

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 107-112

  Ramm, M S ^a   Mokhov, E N ^a   Demina, S E ^a   Ramm, M G ^a   Roenkov, A D ^a   Vodakov, Yu A ^a   Segal, A S ^b   Vorob'ev, A N ^b   Karpov, S Yu ^c   Kulik, A V ^c   Makarov, Yu N ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b ITMO UNIVERSITY   (Russian Federation)

^c SOFT IMPACT LTD   (Russian Federation)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Bulk crystals; Etching of graphite; SiC; Sublimation growth; Tantalum container

Indexed keywords

SUBLIMATION GROWTH;

CRUCIBLES; CRYSTAL GROWTH; CRYSTALLIZATION; ETCHING; GRAPHITE; HEAT TRANSFER; MASS TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION; TANTALUM;

SILICON CARBIDE;

EID: 0032682977     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00456-5     Document Type: Article

References (3)

1. Egorov Yu.E., Galyukov A.O., Gurevich S.G., Makarov Yu.N., Mokhov E.N., Ramm M.G., Ramm M.S., Roenkov A.D., Segal A.S., Vodakov Yu.A., Vorob'ev A.N., Zhmakin A.I. Pensl G., Morkoc H., Monemar B., Janzen E. Proceedings of the ICSCIII-N'97. 1998;61 Trans Tech Publications, Switzerland.
2. A.S. Segal, A.N. Vorob'ev, S.Yu. Karpov, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, Yu.A. Vodakov, A.I. Zhmakin. Mater. Sci. Eng. B (in press).
3. Vodakov Yu.A., Roenkov A.D., Ramm M.G., Mokhov E.N., Makarov Yu.N. Phys. Status Solidi. 202:1997;177.