Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST)

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3781-3786

  Wutimakun, Passapong ^a   Buteprongjit, Chumpol ^a   Morimoto, Jun ^b  

^a Chulachomklao Royal Military Academy   (Thailand)

^b NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

A1. Semi insulating crystal growth; A2. Defect and impurities in crystals; A2. Direct observation of dislocation; B1. Nondestructive testing; B1. Optical method

Indexed keywords

A1. SEMI-INSULATING CRYSTAL GROWTH; A2. DEFECT AND IMPURITIES IN CRYSTALS; A2. DIRECT OBSERVATION OF DISLOCATION; B1. NONDESTRUCTIVE TESTING; B1. OPTICAL METHOD;

ATMOSPHERIC TEMPERATURE; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; D REGION; DEFECTS; DISLOCATIONS (CRYSTALS); ELASTIC CONSTANTS; GRAIN BOUNDARIES; LIGHT SCATTERING; NONDESTRUCTIVE EXAMINATION; SCANNING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; SPACE TIME ADAPTIVE PROCESSING; TOMOGRAPHY;

THREE DIMENSIONAL;

EID: 67649836255     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.05.024     Document Type: Article

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