Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes

IEEE Transactions on Nuclear Science

Volumn 57, Issue 6 PART 1, 2010, Pages 3336-3341

  Gadlage, Matthew J ^a   Ahlbin, Jonathan R ^b   Narasimham, Balaji ^c   Bhuva, Bharat L ^b   Massengill, Lloyd W ^b   Reed, Robert A ^b   Schrimpf, Ronald D ^b   Vizkelethy, Gyorgy ^d  

^a NSWC   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c BROADCOM CORPORATION   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Heavy ions; ion radiation effects; single event transients (SETs); single event upset (SEU)

Indexed keywords

BIPOLAR EFFECTS; BULK CMOS; CONTACT AREAS; ION RADIATION EFFECTS; PULSE BROADENING; PULSE WIDTH; SCALING TRENDS; SINGLE EVENT TRANSIENTS; SINGLE EVENT UPSETS; SUB-100 NM; TEST CIRCUIT; WIDTH MEASUREMENTS;

HEAVY IONS; RADIATION EFFECTS; STATIC RANDOM ACCESS STORAGE;

TRANSIENTS;

EID: 78650417096     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2071881     Document Type: Conference Paper

References (17)

1. M. P. Baze, J. Wert, J. W. Clement, M. G. Hubert, A. Witulski, O. A. Amusan, L. Massengill, and D. McMorrow, "Propagating SET characterization technique for digital CMOS libraries," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3472-3478, Dec. 2006.
2. J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Gadlage, and T. Turflinger, "Digital single event transient trends with technology node scaling," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3462-3465, Dec. 2006.
3. B. Narasimham, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, M. J. Gadlage, O. A. Amusan, W. T. Holman, A. F. Witulski, W. H. Robinson, J. D. Black, J. M. Benedetto, and P. H. Eaton, "Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2506-2511, Dec. 2007.
4. E. Cannon and M. Cabanas-Holmen, "Heavy ion and high energy proton-induced single event transients in 90 nm inverter, NAND and NOR gates," IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3511-3518, Dec. 2009.
5. P. E. Dodd, M. R. Shaneyfelt, J. A. Felix, and J. R. Schwank, "Production and propagation of single-event transients in high-speed digital logic ICs," IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3278-3284, Dec. 2004.
6. B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, A. F. Witulski, W. T. Holman, L. W. Massengill, J. D. Black, W. H. Robinson, and D. McMorrow, "On-chip characterization of single event transient pulse widths," IEEE Trans. Device Mater. Rel., vol. 6, pp. 542-549, 2006.
7. T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, H. Ikeda, D. Takahashi, S. Ishii, M.Kusano, S. Onoda, T. Hirao, and T. Ohshima, "LET dependence of single event transient pulse-widths in SOI logic cell," IEEE Trans. Nucl. Sci., vol. 56, no. 1, pp. 202-207, Feb. 2009.
8. P. Gouker, J. Brandt, P. Wyatt, B. Tyrrell, A. Soares, J. Knecht, C. Keast, D. McMorrow, B. Narasimham, M. Gadlage, and B. Bhuva, "Generation and propagation of single event transients in 0.18 μm fully depleted SOI," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 2854-2860, Dec. 2008.
9. V. Ferlet-Cavrois, P. Paillet, D. McMorrow, N. Fel, J. Baggio, S. Girard, O. Duhamel, J. S. Melinger, M. Gaillardin, J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, and J. A. Felix, "New insights into single event transient propagation in chains of inverters-Evidence for propagation- induced pulse broadening," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2338-2346, Dec. 2007.
10. V. F. Cavrois, V. Pouget, D. McMorrow, J. R. Schwank, N. Fel, F. Essely, R. S. Flores, P. Paillet, M. Gaillardin, D. Kobayashi, J. S. Melinger, O. Duhamel, P. E. Dodd, and M. R. Shaneyfelt, "Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 2842-2853, Dec. 2008.
11. L. W. Massengill and P. W. Tuinenga, "Single-event transient pulse propagation in digital CMOS," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 2861-2871, Dec. 2008.
12. P. W. Tuinenga and L. W. Massengill, "Circuit modeling of singleevent transient pulse stretching in digital CMOS," IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3165-3171, Dec. 2009.
13. M. J. Gadlage, J. R. Ahlbin, B. Narasimham, V. Ramachandran, C. A. Dinkins, N. D. Pate, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, R. L. Shuler, and D. McMorrow, "Increased single-event transient pulse widths in a 90-nm bulk CMOS technology operating at elevated temperatures," IEEE Trans. Device Mater. Rel., vol. 10, pp. 157-163, 2010.
14. B. D. Olson, O. A. Amusan, S. Dasgupta, L. W. Massengill, A. F. Witulski, B. L. Bhuva, M. L. Alles, K. M. Warren, and D. R. Ball, "Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology," IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 894-897, Aug. 2007.
15. O. A. Amusan, L. W. Massengill, B. L. Bhuva, S. DasGupta, A. F. Witulski, and J. R. Ahlbin, "Design techniques to reduce SET pulse widths in deep-submicron combinational logic," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2060-2064, Dec. 2007.
16. J. R. Ahlbin, M. J. Gadlage, B. L. Bhuva, R. A. Reed, G. Vizkelethy, and L. W. Massengill, "The effect of layout topology on single-event transient pulse quenching in a 65 nmbulk CMOSprocess," IEEE Trans. Nucl. Sci., vol. 57, no. 6, Dec. 2010.
17. J. R. Ahlbin, B. L. Bhuva, M. J. Gadlage, L. W. Massengill, B. Narasimham, and P. H. Eaton, "Single event transient pulse quenching in 130 nm CMOS logic," IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3050-3056, Dec. 2009.