Single-event transient pulse quenching in advanced CMOS logic circuits

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3050-3056

  Ahlbin, Jonathan R ^a   Massengill, Lloyd W ^a   Bhuva, Bharat L ^a   Narasimham, Balaji ^b   Gadlage, Matthew J ^a   Eaton, Paul H ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b BROADCOM CORPORATION   (United States)

^c Microelectronics Research and Development Corporation   (United States)

Author keywords

Charge sharing; Pulse quenching; Single event; Single event transient; Single event upset

Indexed keywords

ADVANCED CMOS; BULK CMOS; CHARGE COLLECTION; CHARGE SHARING; CIRCUIT NODES; CMOS TECHNOLOGY; MIXED MODE; PULSE WIDTH; QUENCHING MECHANISMS; SINGLE EVENT TRANSIENTS; SINGLE EVENT UPSETS; SINGLE-EVENTS; VOLTAGE TRANSIENTS;

CMOS INTEGRATED CIRCUITS; LOGIC CIRCUITS; SWITCHING CIRCUITS; THREE DIMENSIONAL; TRANSIENTS;

QUENCHING;

EID: 72349090769     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2033689     Document Type: Conference Paper

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