LET dependence of single event transient pulse-widths in SOI logic cell

IEEE Transactions on Nuclear Science

Volumn 56, Issue 1, 2009, Pages 202-207

  Makino, Takahiro ^a   Kobayashi, Daisuke ^a,b   Hirose, Kazuyuki ^a,b   Yanagawa, Yoshimitsu ^c   Saito, Hirobumi ^b,c   Ikeda, Hirokazu ^a,b   Takahashi, Daisuke ^d   Ishii, Shigeru ^d   Kusano, Masaki ^d   Onoda, Shinobu ^e   Hirao, Toshio ^e   Ohshima, Takeshi ^e  

^a GRADUATE UNIVERSITY FOR ADVANCED STUDIES   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

^e JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Logic cell; Single event transient; SOI

Indexed keywords

ENERGY TRANSFER; LIGHTING FIXTURES; LOGIC CIRCUITS; LOGIC DEVICES;

3-D DEVICE SIMULATIONS; CARRIER RECOMBINATIONS; LINEAR ENERGY TRANSFERS; LOGIC CELL; MIXED MODES; SINGLE EVENT TRANSIENT; SOI;

TRANSIENTS;

EID: 60449101232     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2009054     Document Type: Article

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