Progress in quenching circuits for single photon avalanche diodes

IEEE Transactions on Nuclear Science

Volumn 57, Issue 6 PART 2, 2010, Pages 3815-3826

  Gallivanoni, Andrea ^a   Rech, Ivan ^a,b   Ghioni, Massimo ^a,b,c  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

^c MPD Micro Photon Devices   (Italy)

Author keywords

Avalanche photodiodes; quenching circuits; single photon avalanche diode (SPAD)

Indexed keywords

AVALANCHE MULTIPLICATION; BREAKDOWN VOLTAGE; DETECTOR PERFORMANCE; ELECTRON HOLE PAIRS; GEIGER MODES; MODE OF OPERATIONS; OPTICAL SIGNALS; P-N JUNCTION; QUENCHING CIRCUITS; SINGLE PHOTON AVALANCHE DIODE; STATE OF THE ART;

AVALANCHE PHOTODIODES; DETECTOR CIRCUITS; DIODES; HETEROJUNCTION BIPOLAR TRANSISTORS; MULTIPHOTON PROCESSES; PARTICLE BEAMS; PHOTODIODES; PHOTONS; QUENCHING; SEMICONDUCTOR JUNCTIONS;

AVALANCHE DIODES;

EID: 78650361360     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2074213     Document Type: Article

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