Counting single electrons in a CMOS circuit

"2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008"

Volumn , Issue , 2008, Pages 55-60

  Popovic, Radivoje S ^a   Lany, Marc ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHES (SNOWSLIDES); BIPOLAR TRANSISTORS; COMPUTER NETWORKS; MICROELECTRONICS; SNOW;

INTERNATIONAL CONFERENCES; SINGLE ELECTRONS;

NETWORKS (CIRCUITS);

EID: 51749114887     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2008.4559222     Document Type: Conference Paper

References (20)

1. M. Lany, G. Boero, and R. S. Popovic, "Electron counting at room temperature in an avalanche bipolar transistor," Applied Physics Letters, vol. 92, 022111, January 2008.
2. R.S. Popovic, M. Lany, Patent application PCT/EP2007/064100 of 20.12.2006.
3. S. Cova, M. Ghioni, A. Lacaita, C. Samori, and F. Zappa, "Avalanche photodiodes and quenching circuits for singlephoton detection," Applied Optics, vol. 35, pp. 1956-1976, Apr 1996.
4. R. J. McIntyre, "Recent developments in silicon avalanche photodiodes," Measurement, vol. 3, pp. 146-152, 1985.
5. W.J. Kindth, "Geiger mode avalanche photodiode arrays for spatially resolved single photon counting," PhD thesis, Delft: University press, 1999.
6. A. Pauchard, Silicon sensor microsystem for ultraviolet detection, Konstanz: Hartung-Gorre Verlag, 2000.
7. A. Biber, Avalanche photodiode image sensing in standard silicon BiCMOS technology, PhD thesis, Diss ETH Zurich Nr. 13544, 2000
8. A. Rochas, "Single Photon Avalanche Didoes in CMOS technology," PhD thesis, Diss EPFL Nr. 2814, 2003.
9. A. Rochas, A. R. Pauchard, P. A. Besse, D. Pantic, Z. Prijic, and R. S. Popovic, "Low-noise silicon avalanche photodiodes fabricated in conventional CMOS technologies," IEEE Transactions on Electron Devices, vol. 49, pp. 387-394, Mar 2002.
10. A. Rochas, P. A. Besse, and R. S. Popovic, "Actively recharged single photon counting avalanche photodiode integrated in an industrial CMOS process," Sensors and Actuators a-Physical, vol. 110, pp. 124-129, Feb 2004.
11. C. Niclass, A. Rochas, P. A. Besse, and E. Charbon, "Design and characterization of a CMOS 3-D image sensor based on single photon avalanche diodes," IEEE Journal of Solid-State Circuits, vol. 40, pp. 1847-1854, Sep 2005.
12. T. Fujisawa, T. Hayashi, Y. Hirayama, H. D. Cheong, and Y. H. Jeong, "Electron counting of single-electron tunneling current," Applied Physics Letters, vol. 84, pp. 2343-2345, Mar 2004.
13. J. Bylander, T. Duty, and P. Delsing, "Current measurement by real-time counting of single electrons," Nature, vol. 434, pp. 361-364, Mar 2005.
14. S. M. Sze, Semiconductor Devices: Physics and Technology, second edition, pp. 130-142, New York: Wiley, 2002.
15. D. A. Neamen, Semiconductor Physics and Devices, third edition, pp. 385-392, New York: McGraw-Hill, 2003.
16. K. G. McKay, "Avalanche breakdown in silicon," Physical Review, vol. 94, pp. 877-884, 1954.
17. R. H. Haitz, A. Goetzberger, R. M. Scarlett, and W. Shockley, "Avalanche effects in silicon p-n junctions: 1. Localized photomultiplication studies on microplasmas," Journal of Applied Physics, vol. 34, pp. 1581-&, 1963.
18. Y. C. Kao and E. D. Wolley, "High voltage planar p-n junctions," Proceedings of the Institute of Electrical and Electronics Engineers, vol. 55, pp. 1409-&, 1967.
19. G. Vincent, A. Chantre, and D. Bois, "Electric field effect on the thermal emission of traps in semiconductor junctions," Journal of Applied Physics, vol. 50, pp. 5484-5487, 1979.
20. A. Spinelli, L. M. Davis, and H. Dautet, "Actively quenched single-photon avalanche diode for high repetition rate time-gated photon counting," Review of Scientific Instruments, vol. 67, pp. 55-61, Jan 1996.