A 4 μs integration time imager based on CMOS single photon avalanche diode technology

Sensors and Actuators, A: Physical

Volumn 130-131, Issue SPEC. ISS., 2006, Pages 273-281

  Niclass, Cristiano ^a   Rochas, Alexis ^a   Besse, Pierre André ^a   Popovic, Radivoje ^a   Charbon, Edoardo ^a  

^a EPFL   (Switzerland)

Author keywords

Avalanche effect; Complementary MOS technology; Dynamic range; Geiger mode; High speed imaging; Single photon avalanche diode; Single photon detection; Solid state imaging

Indexed keywords

ANALOG TO DIGITAL CONVERSION; AVALANCHE DIODES; CMOS INTEGRATED CIRCUITS; LIGHT AMPLIFIERS; PHOTONS;

AVALANCHE EFFECT; COMPLEMENTARY MOS TECHNOLOGY; DYNAMIC RANGE; GEIGER MODE; HIGH-SPEED IMAGING; SINGLE PHOTON AVALANCHE DIODE; SINGLE PHOTON DETECTION; SOLID-STATE IMAGING;

IMAGE SENSORS;

EID: 33745843280     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.02.031     Document Type: Article

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