Low dark count single-photon avalanche diode structure compatible with standard nanometer scale CMOS technology

IEEE Photonics Technology Letters

Volumn 21, Issue 14, 2009, Pages 1020-1022

  Richardson, Justin A ^a,b   Grant, Lindsay A ^a   Henderson, Robert K ^b  

^a STMicroelectronics Ltd Bristol   (United Kingdom)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Biomedical imaging; Complementary metal oxide semiconductor (CMOS) integrated circuits; Image sensors; P n junctions; Photodetectors; Photodiodes

Indexed keywords

ACTIVE AREA; BIOMEDICAL IMAGING; CMOS TECHNOLOGY; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) INTEGRATED CIRCUITS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; DARK COUNT RATE; DARK COUNTS; GUARD-RING; IMAGING PROCESS; NANO-METER SCALE; P-N JUNCTIONS; PHOTON DETECTION EFFICIENCY; SCALING TRENDS; SINGLE PHOTON AVALANCHE DIODE;

AVALANCHE DIODES; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; DIGITAL IMAGE STORAGE; HETEROJUNCTION BIPOLAR TRANSISTORS; IMAGE SENSORS; INTEGRATED CIRCUITS; MULTIPHOTON PROCESSES; PARTICLE BEAMS; PHOTODETECTORS; PHOTODIODES; PHOTONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES;

SEMICONDUCTOR JUNCTIONS;

EID: 67650653754     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2022059     Document Type: Article

References (10)

1. H. Finkelstein, M. J. Hsu, and S. C. Esener, "STI-bounded single photon avalanche diode in a deep-submicrometer CMOS Technology," IEEE Electron Device Lett., vol. 27, no. 11, pp. 887-889, Nov. 2006.
2. C. Niclass, M. Gersbach, R. K. Henderson, L. Grant, and E. Charbon, "A single photon avalanche diode implemented in 130 nm CMOS technology," IEEE J. Sel. Topics Quantum Electron., vol. 13, no. 4, pp. 863-869, Jul./Aug. 2007.
3. M. Gersbach, C. Niclass, E. Charbon, J. Richardson, R. K. Henderson, and L. Grant, "A single photon detector implemented in a 130 nm CMOS imaging process," in Proc. 38th Eur. Solid-State Device Research Conf. (ESSDERC 2008), pp. 270-273.
4. N. Faramarzpour,M. J. Deen, S. Shirani, and Q. Fang, "Fully integrated single photon avalanche diode detector in standard CMOS 0.18 μm technology," IEEE Trans. Electron Devices, vol. 55, no. 3, pp. 760-767, Mar. 2008.
5. M. A. Marwick and A. G. Andreou, "Single photon avalanche photodetector with integrated quenching fabricated in TSMC 0.18 μm 1.8 V CMOS process," Electron. Lett., vol. 44, no. 10, pp. 643-644, 2008.
6. A. Lacaita, M. Ghioni, and S. Cova, "Double epitaxy improves single-photon avalanche diode performance," Electron. Lett., vol. 25, pp. 841-843, 1989.
7. M. Ghioni, A. Gulinatti, I. Rech, F. Zappa, and S. Cova, "Progress in silicon single-photon avalanche diodes," IEEE J. Sel. Topics Quantum Electron., vol. 13, no. 4, pp. 852-862, Jul./Aug. 2007.
8. A. Rochas, M. Gani, B. Furrer, P. A. Besse, R. S. Popovic, G. Ribordy, and N. Gisin, "Single photon detector fabricated in a complementary metal-oxide-semiconductor high-voltage technology," Rev. Sci. Instrum., vol. 74, pp. 3263-3270, 2003.
9. F. Zappa, S. Tisa, A. Gulinatti, A. Gallivanoni, and S. Cova, "Complete single-photon counting and timing module in a microchip," Opt. Lett. vol. 30, pp. 1327-1329, 2005.
10. C. J. Stapels, W. G. Lawrence, F. L. Augustine, and J. F. Christian, "Characterization of a CMOS Geiger photodiode pixel," IEEE Trans. Electron Devices, vol. 53, no. 4, pp. 631-635, Apr. 2006.