Gated operation of InGaAs SPADs with active-quenching and fast timing circuits

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6372, Issue , 2006, Pages

  Tosi, Alberto ^a   Gallivanoni, Andrea ^a   Zappa, Franco ^a,b   Cova, Sergio ^a,b  

^a POLITECNICO DI MILANO   (Italy)

^b MPD Micro Photon Devices   (Italy)

Author keywords

Active quenching; Afterpulsing effect; Dark counting rate; Gated detector; Infrared photons; Photon timing

Indexed keywords

CRYOGENICS; INFRARED SPECTROSCOPY; LOGIC GATES; PHOTONS; QUENCHING;

AFTERPULSING EFFECT; DARK COUNTING RATE; INFRARED PHOTONS; PHOTON TIMING;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33846238938     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.685808     Document Type: Conference Paper

References (21)

1. H. Zbinden, H. Bechmann-Pasquinucci, N. Gisin, G. Ribordy, "Quantum Cryptography", Appl. Phys. B, vol. 67, 1998, pp. 743-748.
2. J.A. Kash and J.C. Tsang, "Dynamic Internal Testing of CMOS Circuits Using Hot Luminescence", IEEE Electron Dev. Let., vol. 18, no. 7, 1997, pp. 330-332.
3. F. Stellari, A. Tosi, F. Zappa, S. Cova, "CMOS Circuit Testing via Time-Resolved Luminescence Measurements and Simulations", Instrumentation and Measurement, IEEE Transactions on, Volume 53, Issue 1, Feb. 2004, pp. 163-169.
4. G. N. Gol'tsman, O. Okunev, G. Chulkova, A. Lipatov, A. Dzardanov, K. Smirnov, A. Semenov, B. Voronov, C. Williams, R. Sobolewski, "Fabrication and properties of an ultrafast NbN hot-electron single-photon detector", IEEE Trans. On Applied Superconductivity, 11, pp. 574-577, 2001.
5. S. Cova, M. Ghioni, A.L. Lacaita, C. Samori and F. Zappa, "Avalanche photodiodes and quenching circuits for single photon-detection", Appl. Opt. 35, 1956-1976 (1996).
6. A. Lacaita, F. Zappa, S. Cova, P. Lovati, "Single-photon detection beyond 1 μm: performance of commercially available InGaAs/InP detectors", Appl. Opt., 35, 2986 (1996).
7. A. Lacaita, P.A. Francese, F. Zappa, S. Cova, "Single photon detection beyond 1 μm: performance of commercially available germanium photodiodes", Appl. Opt. 33, 6902 (1994).
8. K. Nishida, K. Taguchi, and Y. Matsumoto, "InGaAsP heterostructure avalanche photodiodes with high avalanche gain," Appl. Phys. Lett., 35, 251-252 (1979).
9. J. C. Campbell, A. G. Dentai, W. S. Holden, and B. L. Kasper, "High-performance avalanche photodiode with separate absorption, 'grading', and multiplication regions," Electron. Lett., 19, 818-820 (1983).
10. S. R. Forrest, O. K. Kim, and R. G. Smith, "Optical response time of In0.53Ga0.47As avalanche photodiodes," Appl. Phys. Lett., 41, 95-98 (1982).
11. www.princetonlightwave.com
12. W.O. Oldham, R.R. Samuelson and P. Antognetti, "Triggering Phenomena in Avalanche Diodes", IEEE Trans. Electron Devices ED-19, 1056-1060 (1972).
13. R. H. Haitz, "Mechanism contributing to the noise pulse rate of avalanche diodes", J. Appl. Phys., vol.36, 1965, pp. 3123-3131.
14. S. Cova, A.L. Lacaita, G. Ripamonti, 1991, IEEE Electron. Dev. Lett., 12, 685.
15. G. Ribordy, J.D. Gautier, H. Zbinden, N. Gisin, "Performance of InGaAs/InP avalanche photodiodes as gated-mode photon counters", Appl. Opt. 37, 2272-2277 (1998).
16. D.S. Bethune, R.G. Devoe, C. Kurtsiefer, C.T Retterner, W.P. Risk, "System for gated detection of optical pulses containing a small number of photons using an avalanche photodiode", US Patent 6.218,657, April 17, 2001.
17. A. Tomita and K. Nakamura, "Balanced gated-mode photon detector for quantum-bit discrimination at 1550nm", Opt. Lett. 27, 1827-1829 (2002).
18. F. Zappa, A. Lotito, A. C. Giudice, S. Cova, and M. Ghioni, "Monolithic active-quenching and active-reset circuit for single-photon avalanche detectors", IEEE J. of Solid-State Circuits 38, 1298-1301 (2003).
19. A. Gallivanoni, I. Rech, D. Resnati, M. Ghioni, and S. Cova, "Monolithic active quenching and picosecond timing circuit suitable for large-area single-photon avalanche diodes", Optics Express, Vol. 14, Issue 12, pp. 5021-5030 (June 2006)
20. S. Cova. M. Ghioni and F. Zappa, "Circuit for high precision detection of the time of arrival of photons falling on single photon avalanche diodes", US Patent 6,384,663 B2, May 7, 2002.
21. A. Gulinatti, P. Maccagnani, I. Rech, M. Ghioni and S. Cova, "35 ps time resolution at room temperature with large area single photon avalanche diodes", Electronics Letters 41, 272-274 (2005).