Characterization of single-photon avalanche diodes in standard CMOS

Proceedings of IEEE Sensors

Volumn , Issue , 2009, Pages 1889-1892

  Nouri, Babak ^a   Dandin, Marc ^a   Abshire, Pamela ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; CMOS PROCESSS; COMBINED EFFECT; DARK COUNT RATE; EDGE BREAKDOWN; GATE POTENTIALS; GEIGER MODES; GUARD-RINGS; LATERAL DIFFUSION; NOISE FLOOR; POLYSILICON GATES; SINGLE PHOTON AVALANCHE DIODE; STANDARD CMOS; SURFACE REGION;

CMOS INTEGRATED CIRCUITS; DIODES; ELECTRIC BREAKDOWN; MICROPROCESSOR CHIPS; MULTIPHOTON PROCESSES; PARTICLE BEAMS; PHOTONS; POLYSILICON; SENSORS;

AVALANCHE DIODES;

EID: 77951116378     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2009.5398384     Document Type: Conference Paper

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