Simulation of electron beam lithography of nanostructures

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 6, 2010, Pages

  Stepanova, M ^a   Fito, T ^a,b   Szabó, Zs ^a,b   Alti, K ^a,b   Adeyenuwo, A P ^b   Koshelev, K ^a,b   Aktary, M ^c   Dew, S K ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF ALBERTA   (Canada)

^c Applied Nanotools Inc ^*  (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; MEAN FIELD THEORY; NANOSTRUCTURES; PROCESS ENGINEERING; SIMULATORS; TITRATION;

BACKSCATTERED ELECTRONS; CHAIN SCISSION; DENSE GRATINGS; EXPOSURE ENERGY; KINETIC MODELS; KINETIC PROCESS; MODELING AND ANALYSIS; NUMERIC SIMULATION; POLYMER DIFFUSION; POSITIVE-TONE RESISTS; RESIST PROFILE; SOLID SUBSTRATES; THREE-DIMENSIONAL (3D);

THREE DIMENSIONAL;

EID: 78650157244     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3497019     Document Type: Article

References (48)

1. D. F. Kyser and N. S. Viswanathan, J. Vac. Sci. Technol. JVSTAL 0022-5355 12, 1305 (1975). 10.1116/1.568524
2. R. Shimizu and T. E. Everhart, Appl. Phys. Lett. APPLAB 0003-6951 33, 784 (1978). 10.1063/1.90504
3. M. Parikh and D. F. Kyser, J. Appl. Phys. JAPIAU 0021-8979 50, 1104 (1979). 10.1063/1.326088 (Pubitemid 9442085)
4. D. F. Kyser and R. Ryle, IBM J. Res. Dev. IBMJAE 0018-8646 24, 426 (1980). 10.1147/rd.244.0426
5. I. Adesida, R. Shimizu, and T. E. Everhart, J. Appl. Phys. JAPIAU 0021-8979 51, 5962 (1980). 10.1063/1.327515 (Pubitemid 11470553)
6. K. Murata, D. F. Kyser, and C. H. Ting, J. Appl. Phys. JAPIAU 0021-8979 52, 4396 (1981). 10.1063/1.329366 (Pubitemid 12429913)
7. N. Samoto and R. Shimizu, J. Appl. Phys. JAPIAU 0021-8979 54, 3855 (1983). 10.1063/1.332610 (Pubitemid 13576383)
8. K. Murata, H. Kawata, K. Nagami, Y. Hirai, and Y. Mano, J. Vac. Sci. Technol. B JVTBD9 1071-1023 5, 124 (1987). 10.1116/1.583845
9. C. R. K. Marrian, F. K. Perkins, D. Park, E. A. Dobisz, M. C. Peckerar, K. -W. Rhee, and R. Bass, J. Vac. Sci. Technol. B JVTBD9 1071-1023 14, 3864 (1996). 10.1116/1.588683
10. S. -H. Kim, Y. -M. Ham, W. Lee, and K. Chun, Microelectron. Eng. MIENEF 0167-9317 41-42, 179 (1998). 10.1016/S0167-9317(98)00040-9
11. Y. Lee, W. Lee, K. Chun, and H. Kim, J. Vac. Sci. Technol. B JVTBD9 1071-1023 17, 2903 (1999). 10.1116/1.591093
12. V. V. Ivin, M. V. Silakov, G. A. Babushkin, B. Lu, P. J. Mangat, K. J. Nordquist, and D. J. Resnik, Scanning SCNNDF 0161-0457 11, 176 (1989).
13. J. S. Greeneich and T. Van Duzer, IEEE Trans. Electron Devices IETDAI 0018-9383 21, 286 (1974). 10.1109/T-ED.1974.17914
14. T. Biewer and P. Rez, J. Appl. Phys. JAPIAU 0021-8979 76, 7636 (1994). 10.1063/1.357934
15. N. Glezos, I. Raptis, D. Tsoukalas, and M. Hatzakis, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10, 2606 (1992). 10.1116/1.586335
16. I. Raptis, N. Glezos, and M. Hatzakis, J. Vac. Sci. Technol. B JVTBD9 1071-1023 11, 2754 (1993). 10.1116/1.586596
17. H. Schmoranzer and M. Reisser, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 105, 35 (1995). 10.1016/0168-583X(95)00910-8
18. N. Glezos and I. Raptis, IEEE Trans. Comput.-Aided Des. ITCSDI 0278-0070 15, 92 (1996). 10.1109/43.486275
19. B. K. Paul, Microelectron. Eng. MIENEF 0167-9317 49, 233 (1999). 10.1016/S0167-9317(99)00444-X (Pubitemid 30519299)
20. I. Raptis, N. Glezos, E. Valamontes, E. Zervas, and P. Argitis, Vacuum VACUAV 0042-207X 62, 263 (2001). 10.1016/S0042-207X(00)00448-6 (Pubitemid 32534769)
21. J. Zhou and X. Yang, J. Vac. Sci. Technol. B JVTBD9 1071-1023 24, 1202 (2006). 10.1116/1.2192543 (Pubitemid 43838765)
22. J. S. Greeneich, J. Vac. Sci. Technol. JVSTAL 0022-5355 12, 5264 (1974).
23. G. Han, M. Khan, and F. Cerrina, J. Vac. Sci. Technol. B JVTBD9 1071-1023 21, 3166 (2003). 10.1116/1.1627798
24. A. Chapiro, Radiation Chemistry of Polymeric Systems (Wiley, New York, 1962), p. 515.
25. M. Aktary, M. Stepanova, and S. K. Dew, J. Vac. Sci. Technol. B JVTBD9 1071-1023 24, 768 (2006). 10.1116/1.2181580
26. L. Masaro and X. X. Zhu, Prog. Polym. Sci. PRPSB8 0079-6700 24, 731 (1999). 10.1016/S0079-6700(99)00016-7 (Pubitemid 30497914)
27. B. A. Miller-Chou and J. L. Koenig, Prog. Polym. Sci. PRPSB8 0079-6700 28, 1223 (2003). 10.1016/S0079-6700(03)00045-5
28. D. Achilias, Macromol. Theory Simul. MTHSEK 1022-1344 16, 319 (2007). 10.1002/mats.200700003 (Pubitemid 47260376)
29. D. G. Hasko, S. Yasin, and A. Mumatz, J. Vac. Sci. Technol. B JVTBD9 1071-1023 18, 3441 (2000). 10.1116/1.1319834 (Pubitemid 32088231)
30. F. Brochard and P. G. de Gennes, Europhys. Lett. EULEEJ 0295-5075 1, 221 (1986). 10.1209/0295-5075/1/5/004
31. J. S. Papanu, D. S. Soane, A. T. Bell, and D. W. Hess, J. Appl. Polym. Sci. JAPNAB 0021-8995 38, 859 (1989). 10.1002/app.1989.070380509
32. B. Narasimhan and N. A. Peppas, Adv. Polym. Sci. APSIDK 0065-3195 128, 157 (1997).
33. M. A. Mohammad, T. Fito, J. Chen, S. Buswell, M. Aktary, M. Stepanova, and S. K. Dew, Microelectron. Eng. MIENEF 0167-9317 87, 1104 (2010). 10.1016/j.mee.2009.11.047
34. M. A. Mohammad, T. Fito, J. Chen, S. Buswell, M. Aktary, S. K. Dew, and M. Stepanova, in Lithography, edited by, Michael Wang, (INTECH, Vukovar, Croatia, 2010), pp. 293-318.
35. B. Wu and A. R. Neureuther, J. Vac. Sci. Technol. B JVTBD9 1071-1023 19, 2508 (2001). 10.1116/1.1421548 (Pubitemid 34089774)
36. S. M. Scheinhardt-Engels, F. A. M. Leermakers, and G. J. Fleer, Phys. Rev. E PLEEE8 1063-651X 68, 011802 (2003). 10.1103/PhysRevE.68.011802
37. Z. Tan, Y. Xia, X. Liu, and M. Zhao, Microelectron. Eng. MIENEF 0167-9317 77, 285 (2005). 10.1016/j.mee.2004.11.009 (Pubitemid 40391473)
38. P. -F. Staub, J. Phys. D JPAPBE 0022-3727 27, 1533 (1994). 10.1088/0022-3727/27/7/030
39. A. Jablonski, J. Gryko, J. Kraaser, and S. Tougaard, Phys. Rev. B PLRBAQ 0556-2805 39, 61 (1989). 10.1103/PhysRevB.39.61
40. Truncation of the yield of scission per monomer at the level of 1 limits the present model to the performance of PMMA as a positive tone resist. Extension of the model to include negative-tone PMMA would require lifting of the truncation of the scission events. In this article, however, only positive tone PMMA is considered, and the truncation is compatible.
41. E. W. Montroll and R. Simha, J. Chem. Phys. JCPSA6 0021-9606 8, 721 (1940). 10.1063/1.1750807
42. W. Kuhn, Ber. Dtsch. Chem. Ges. B BDCBAD 0365-9488 63, 1503 (1930). 10.1002/cber.19300630631
43. T. Fito, M. A. Mohammad, Zs. Szabó, J. Chen, M. Aktary, S. K. Dew, and M. Stepanova (unpublished).
44. P. G. de Gennes, J. Chem. Phys. JCPSA6 0021-9606 55, 572 (1971) 10.1063/1.1675789; P. G. de Gennes, Macromolecules MAMOBX 0024-9297 9, 587 (1976). 10.1021/ma60052a011
45. V. A. Harmandaris, V. G. Mavrantzas, D. N. Theodorou, M. Kroger, J. Ramirez, H. C. Ottinger, and D. Vlassopoulos, Macromolecules MAMOBX 0024-9297 36, 1376 (2003). 10.1021/ma020009g
46. M. A. Mohammad, T. Fito, J. Chen, M. Aktary, S. K. Dew, and M. Stepanova, J. Vac. Sci. Technol. B JVTBD9 1071-1023 28, L1 (2010). 10.1116/1.3268131
47. The high exposure dose is required for the reason that cold development (-15 °C) has been used in this example; see also the study of the interdependence of optimum exposure and development conditions in Ref..
48. M. A. Mohammad, Cz. Guthy, S. Evoy, S. K. Dew, and M. Stepanova, J. Vac. Sci. Technol. B JVTBD9 1071-1023 (2010) in press. 10.1116/1.3517683 10.1116/1.3517683