Crystalline thin films of stoichiometric Cu 3N and intercalated Cu 3NM x (M = metals): Growth and physical properties

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 12, 2010, Pages 2769-2780

  Ji, Ailing ^a   Yun, Du ^a   Gao, Lei ^a   Cao, Zexian ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Cu 3N; metal semiconductor transitions; morphology; noble metal nitrides; semiconductors; thin films

Indexed keywords

BAND GAPS; COSPUTTERING; CRYSTALLINE THIN FILMS; CU TARGET; CU 3N; DECOMPOSITION PRODUCTS; DECOMPOSITION TEMPERATURE; ELECTRICAL CONDUCTION; ELECTRICAL CONDUCTIVITY; ELECTRICAL RESISTIVITY; GROWING FILMS; GROWTH CONDITIONS; METAL ATOMS; METAL NITRIDES; METAL-SEMICONDUCTOR TRANSITIONS; METALLIC CONDUCTOR; NOBLE-METAL NITRIDES; POTENTIAL APPLICATIONS; RE-EMISSION; REACTIVE MAGNETRON SPUTTERING; ROOM TEMPERATURE; SEMICONDUCTORS; SI(1 0 0); TEMPERATURE RANGE; TERNARY COMPOUNDS; THERMALLY UNSTABLE;

ARGON; ELECTRIC CONDUCTIVITY; FILM GROWTH; METALS; MORPHOLOGY; NITRIDES; PALLADIUM; PRECIOUS METALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SOLVENTS; THIN FILMS;

COPPER;

EID: 78650122301     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026449     Document Type: Article

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