Firing stability of atomic layer deposited Al2O3 for c-Si surface passivation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 000705-000708

  Dingemans, G ^a   Engelhart, P ^b   Seguin, R ^b   Hoex, B ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Q CELLS SE ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CRYSTALLINE SILICON SOLAR CELLS; FIRING PROCESS; FIRING STABILITY; HIGH TEMPERATURE PROCESS; N TYPE SILICON; SCREEN-PRINTED SOLAR CELLS; SI SURFACES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; THERMAL STABILITY;

ALUMINUM; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SOLAR CELLS; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS;

SILICON WAFERS;

EID: 77951581600     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411187     Document Type: Conference Paper

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