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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 43, Issue 1, 2010, Pages 106-110

Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates

(6) Ben Naceur, H a Mzoughi, T a Moussa, I a Nguyen, L b Rebey, A a El Jani, B a

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

b CRHEA CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE; CRYSTALLINE QUALITY; DISLOCATION DENSITIES; GAAS SUBSTRATES; HALL EFFECT MEASUREMENT; HIGH RESOLUTION X RAY DIFFRACTION; INAS; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE GROWTH; NANODOTS; ROOM TEMPERATURE; SURFACTANT EFFECTS; V/III RATIO;

ATMOSPHERIC MOVEMENTS; ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; BISMUTH; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SUBSTRATES; SURFACE ACTIVE AGENTS; THICKNESS MEASUREMENT; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 78649972053 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2010.06.028 Document Type: Article

Times cited : (9)

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