SCOPUS 정보 검색 플랫폼

Volumn 278, Issue 1-4, 2005, Pages 57-60

Indium segregation during multilayer InAs/GaAs(0 0 1) quantum dot formation

(4) Howe, P a Le Ru, E C a Murray, R a Jones, T S a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

A1. Growth models; A1. Reflection high energy electron diffraction; A1. Segregation; A2. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ARSENIC; ELECTRON DIFFRACTION; GALLIUM; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR QUANTUM DOTS;

ADATOM POPULATION; GROWTH MODELS; SEMICONDUCTING III-V MATERIALS; SMALL SPACER LAYERS;

INDIUM COMPOUNDS;

EID: 18444411047 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.053 Document Type: Conference Paper

Times cited : (19)

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