Temperature dependence of Bi behavior in MBE growth of InGaAs/InP

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 121-124

  Feng, Gan ^a   Oe, Kunishige ^a   Yoshimoto, Masahiro ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Atomic force microscopy; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Bismuth compounds; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE ACTIVE AGENTS;

LOW GROWTH TEMPERATURE; SEMICONDUCTING III-V MATERIALS; SURFACE SMOOTHNESS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33947316249     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.242     Document Type: Article

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