Random and channeling stopping powers and charge-state distributions in silicon for 0.2–1.2 mev/u positive heavy ions

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 1, 1999, Pages 226-234

  Jiang, W ^a   Grotzschel R ^a   Pilz, W ^a   Schmidt, B ^a   Moller W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000141149     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.226     Document Type: Article

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