Ranges and moments of depth distributions of boron and phosphorus implanted into silicon in the energy range 1.7 - 5.0 MeV with an Eaton NV-GSD/VHE implanter

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 567-570

  Rubin, Leonard ^a   Shaw, Winfred ^a   Jones, Mary A ^a   Wilson, Robert G ^a  

^a EATON CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHARGE COUPLED DEVICES; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; PHOSPHORUS; RADIATION DAMAGE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

TILT ORIENTATIONS;

ION IMPLANTATION;

EID: 0030359964     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)