Characterization of interstitial defect clusters in ion-implanted Si

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 193-198

  Benton, J L ^a   Libertino, S ^a   Coffa, S ^a   Eaglesham, D J ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; ION IMPLANTATION; REACTION KINETICS; SEMICONDUCTOR DOPING;

INTERSTITIAL DEFECT CLUSTERS; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0031353212     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-193     Document Type: Conference Paper

References (13)