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Volumn , Issue , 1996, Pages 571-574
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Medium and high energy phosphorus implants into silicon
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL STRUCTURE;
MONTE CARLO METHODS;
OXIDES;
PHOSPHORUS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING SILICON;
DEPTH PROFILES;
ION IMPLANTATION;
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EID: 0030361785
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (16)
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