Kinetics and depth distributions of oxygen implanted into Si analyzed by the Monte Carlo simulation of extended TRIM

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 A, 1997, Pages 7323-7328

  Yoneda, Tomoaki ^a   Kajiyama, Kenji ^a   Tohjou, Fumiyo ^b   Yoshioka, Yoshiaki ^b   Ikeda, Atsushi ^c   Kisaka, Yoshiaki ^c   Nishimura, Tomoaki ^c   Kido, Yoshiaki ^c  

^a Ion Eng Res Institute Corporation   (Japan)

^b Matsushita Techno Research Co Ltd   (Japan)

^c RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPUTER SIMULATION; MONTE CARLO METHODS; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON; SPECTRUM ANALYSIS; STOICHIOMETRY;

DEPTH DISTRIBUTION; KINETICS DISTRIBUTION;

ION IMPLANTATION;

EID: 0031361935     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7323     Document Type: Article

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