Modeling of Boron, Phosphorus, and Arsenic Implants into Single-Crystal Silicon over a Wide Energy Range (Few keV to Several MeV)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 721-724

  Morris, S J ^a   Obradovic, B ^a   Yang, S H ^b   Tasch, A F ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; ION IMPLANTATION; SILICON WAFERS; SINGLE CRYSTALS; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; INTEGRATED CIRCUIT MANUFACTURE; MATHEMATICAL MODELS; PHOSPHORUS; POLARIZATION; SEMICONDUCTING SILICON;

ARSENIC IMPLANTS; ARSENIC IONS; BORON IMPLANTS; BORON ION IMPLANTATION; ENERGY; ON-AXIS; PHOSPHORUS ION IMPLANTATIONS; PHYSICALLY BASED; SINGLE CRYSTAL SILICON; WIDE ENERGY RANGE;

PHOSPHORUS; ION IMPLANTATION;

DAMAGE ACCUMULATION; ELECTRONIC STOPPING; FERMI WAVE NUMBER; SINGLE CRYSTAL SILICON;

EID: 0030399253     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554082     Document Type: Conference Paper

References (7)

1. O.B. Firsov, Soviet Physics JETP, Vol. 36 (9), No. 5, (1) pp. 1076 - 1080, NOV.,1959.
2. T.Kaneko, phys. stat. sol. (b) 156, pp. 49 - 63, 1989.
3. T.-C. Ma, Y.-N. Wang, and T. Cui, J. Appl. Phys. 72 (S), pp. 3838 - 3840, October, 1992.
4. W. Brandt and M. Kitagawa, Phys. Rev. B, Vol. 25, No. 9, pp. 5631 - 5637, May, 1982.
5. R. Mathar and M. Posselt, Phys. Rev. B, Vol. 51, No. 1, pp. 107 - 116, Jan., 1995.
6. J. F. Ziegler, J. P. Iiersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985), Vol. 1.
7. M. J. van Dort, P. 13. Woerlee, and A. J. Walker, Solid-State Electronics, Vol. 37, No. 3, pp. 411-414, 1994.