Nitrogen implantation and diffusion in silicon

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 277-281

  Adam, Lahir Shaik ^a   Law, Mark E ^a   Dokumaci, Omer ^b   Haddara, Yaser ^a   Murthy, Cheruvu ^b   Park, Heemyong ^b   Hegde, Suri ^b   Chidambarrao, Dureseti ^b   Mollis, Steve ^b   Domenicucci, Tony ^b   Dziobkowski, Chester ^b   Jones, Kevin ^a   Wong, Philip ^b   Young, Ralph ^b   Srinivasan, R ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; DIFFUSION IN SOLIDS; ION IMPLANTATION; NITROGEN; SILICON WAFERS;

SUB-AMORPHIZING DOSES;

SEMICONDUCTING SILICON;

EID: 0032685411     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-277     Document Type: Article

References (7)

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