Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

Nanoscale Research Letters

Volumn 5, Issue 12, 2010, Pages 1921-1925

  Vanacore, Giovanni Maria ^a   Zani, Maurizio ^a   Bollani, Monica ^b   Colombo, Davide ^a   Isella, Giovanni ^a   Osmond, Johann ^a,c   Sordan, Roman ^a   Tagliaferri, Alberto ^a  

^a POLITECNICO DI MILANO   (Italy)

^b CNR Istituto di Fotonica e Nanotecnologie   (Italy)

^c ICFO INSTITUT DE CIENCIES FOTONIQUES   (Spain)

Author keywords

Diffusion; Growth dynamics; Nucleation; Ordering; Pit patterned Si surface; SiGe islands

Indexed keywords

ENERGETIC FACTORS; GE ATOM; GROWTH DYNAMICS; GROWTH EVOLUTION; LOCAL DENSITY; ORDERED GROWTH; ORDERING; PHYSICAL SCENARIO; SCANNING AUGER MICROSCOPY; SELF-ASSEMBLED; SI SURFACES; SI(100) SURFACE; SIGE ISLANDS; SURFACE COVERAGES;

ATOMIC FORCE MICROSCOPY; AUGERS; GERMANIUM; GROWTH KINETICS; NUCLEATION; SILICON; SILICON ALLOYS; THERMAL DIFFUSION IN LIQUIDS;

DIFFUSION;

SIGE;

EID: 78649734117     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9781-0     Document Type: Article

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