Vapor-solid-solid growth of Ge nanowires from GeMn solid cluster seeds

Surface Science

Volumn 605, Issue 1-2, 2011, Pages 7-11

  Berbezier, I ^a   Ayoub, J P ^a   Favre, L ^a   Ronda, A ^a   Morresi, L ^b   Pinto, N ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIVERSITY OF CAMERINO   (Italy)

Author keywords

Ge nanowire; Ge Mn; Molecular beam epitaxy; TEM; Vapor solid solid

Indexed keywords

CODEPOSITION; CRITICAL NUCLEI; CRYSTALLINE AXIS; CRYSTALLINE GE; ENERGY FORMATION; EUTECTIC POINTS; EXPERIMENTAL CONDITIONS; GE NANOWIRE; GE-MN; GERMANIUM CRYSTALS; GROWTH PROCESS; HIGH DEPOSITION TEMPERATURE; HIGH TEMPERATURE; MATRIX; MN ATOMS; MN CONCENTRATIONS; NUMBER OF CLUSTERS; SINGLE-STEP; SMALL CLUSTERS; SOLID CLUSTERS; TEM; VAPOR-SOLID; VAPOR-SOLID-SOLID;

CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; EUTECTICS; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; PHASE INTERFACES; PHASE SEPARATION; VAPORS;

GERMANIUM;

EID: 78649647565     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.09.014     Document Type: Article

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